专利名称：Method of forming self-aligned silicides
from silence发明人：Yei-Hsiung Lin,Steven Huang
申请号：US11004949
申请日：20041207
公开号：US07432181B2
公开日：
20081007
专利附图：
摘要：A method of forming self-aligned silicides is described and applied to a
substrate having an isolation area, which divides the substrate into a first area and a
second area. A resist protective oxide layer is formed on the substrate, and subsequently a mask layer is formed on the resist protective oxide layer. Further, the mask layer
includes an opening on the first area and another opening on a contact hole of the second area. When a resist protective oxide process is performed, the mask layer protects the resist protective oxide layer underlying the same from being removed, whereas the resist protective oxide layer under the openings are removed. Therefore, silicides are controlled to form on the first area and the contact hole of the second area in a subsequent self-aligned silicidation process.
申请人：Yei-Hsiung Lin,Steven Huang
地址：Hsinchu TW,Kaohsiung TW
国籍：TW,TW
代理机构：Sughrue Mion, PLLC
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