专利名称：FURNACE FOR FORMING OXIDE FILM 发明人：IWASE MASAO
申请号：JP10331685
申请日：19850515
公开号：JPS61263133A
from silence公开日：
19861121
专利内容由知识产权出版社提供
摘要：PURPOSE:To conduct a control so that the thickness of an oxide film of each substrate in the same lot be equal by a method wherein substrates are put in from one side of a core tube and taken out of the other while a time for effective oxidation of each substrate in the same lot is made uniform. CONSTITUTION:After a plurality of silicon wafers 14 are set to a wafer fixing jig 15, rotating shafts 18a and 18b are connected to the jig 15, and the wafer fixing jig 15 is put into a core tube 11 through an opening on one side of this tube. Thereafeter caps 12a and 12b are fitted to the openings of the core tube 11 to close up these openings. Then, with the rotating shafts 18a and 18b rotated, the wafer fixing jig 15 is moved from one side of the core tube 11 to the center thereof, and O2 gas, for instance, is introduced from gas introduction ports 13a-13c, so as to start oxidation. On the occasion, the wafer fixing jig 15 rotates with the rotation of the rotating shafts 18a and 18b, and therefore the silicon wafers 14 rotate as well. When the oxidation is ended, the gas is stopped, and the wafer fixing jig 15, while rotating, is taken outside from the side of the opening opposite to that wherefrom it is put in.
申请人：TOSHIBA CORP
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