专利名称：OPC METHOD FOR A SHALLOW ION
祥云浮现
IMPLANTING LAYER
发明人：Yueyu Zhang,Meng Kang
申请号：US15800081
申请日：20171101
公开号：US20190035775A1李宣榕
公开日：
蔡紫老公
20190131
专利附图：
steal away摘要：The present invention discloses an OPC method for a shallow ion implanting layer, comprising the following steps of: selecting a valid device region in an implanting active region in a shallow ion implanting original layout; selecting a region in the valid
清晨音乐device region which is contacted with a poly-silicon pattern in a poly-silicon layer, as a poly-silicon contacting region; extending the length and width of the poly-silicon contacting region and the non poly-silicon contacting region, to form a new poly-silicon contacting region and a new non poly-silicon contacting region; combining a gap portion which an interval between any two new poly-silicon contacting regions and/or new non poly-silicon contacting regions after extending is smaller than or equal to G and completely fallen in the STI region, with the poly-silicon contacting regions and non poly-silicon contacting regions after extending, to form a correction target layer; performing a model-based OPC routine on the correction target layer, to obtain a mask layer.
申请人：Shanghai Huali Microelectronics Corporation
地址：Shanghai CN
国籍：CN
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