MMBV109LT1, MV209
Preferred Devices
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;providing solid−state reliability in replacement of mechanical tuning methods.
Features
•High Q with Guaranteed Minimum Values at VHF Frequencies •Controlled and Uniform Tuning Ratio •Available in Surface Mount Package •
Pb−Free Packages are Available
MAXIMUM RATINGS (T C  = 25°C unless otherwise noted)
Rating
Symbol Value Unit Reverse Voltage V R 30Vdc Forward Current
I F 200
mAdc
Forward Power Dissipation
MMBV109LT1
@ T A  = 25°C
Derate above 25°C
MV209
@ T A  = 25°C
Derate above 25°C P D
2002.02001.6
mW mW/°C mW mW/°C Junction Temperature T J +125°C Storage Temperature Range
T stg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS  (T A  = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R  = 10 m Adc)
V (BR)R 30−
−Vdc Reverse Voltage Leakage Current (V R  = 25 Vdc)
I R −−0.1m Adc Diode Capacitance T emperature Co-efficient (V R  = 3.0 Vdc, f = 1.0 MHz)
TC C
−
300
−
ppm/°C
onsemi
Preferred  devices are recommended choices for future use and best overall value.
MV 209AYWW G
G
TO−92 (TO−226AC)
CASE 182STYLE 1
SOT−23 (TO−236)CASE 318−08STYLE 8
MV209= Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
M4A M G
G M4A = Device Code M = Date Code*G = Pb−Free Package
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)*Date Code orientation and/or overbar may vary depending upon manufacturing location.
MARKING DIAGRAMS
C t , Diode Capacitance V R  = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit V R  = 3.0 Vdc f = 50 MHz
C R , Capacitance Ratio
C 3/C 25
f = 1.0 MHz  (Note 1)Device Package Shippin
g †Min
Nom
Max
Min
Min
Max
MMBV109LT1SOT−233,000 / Tape & Reel 26
29
32
200
5.0
6.5
MMBV109LT1G SOT−23(Pb−Free)3,000 / Tape & Reel MMBV109LT3SOT−2310,000 / Tape & Reel MMBV109LT3G SOT−23(Pb−Free)10,000 / Tape & Reel MV209TO−921,000 Units / Bag MV209G
TO−92(Pb−Free)
1,000 Units / Bag
1.C R  is the ratio of C t  measured at 3 Vdc divided by C t  measured at 25 Vdc.
Figure 1. DIODE CAPACITANCE
V R , REVERSE VOLTAGE (VOLTS)
C T , C A P A C
I T A N C E  − p F
Figure 2. FIGURE OF MERIT
f, FREQUENCY (MHz)
Figure 3. LEAKAGE CURRENT T A , AMBIENT TEMPERATURE Figure 4. DIODE CAPACITANCE
T A , AMBIENT TEMPERATURE
Q , F I G U R E  O F
M E R I T
1000
100
10
, R E V E R S E  C U R R E N T  (n A )
100−60
0.010.001
+40
+100C t , D I O D E  C A P A C I T A N C E  (N O R M A L I Z E D )
1.04−75
1.021.000.980.96−25
+25
+75
+125
+120+140
+80+60
+20
−40
−20
I R 0.11.010202.00.20.020.0020.006
0.06
0.6
6.060−50
+50
+1001.031.010.990.97NOTES ON TESTING AND SPECIFICATIONS
PACKAGE DIMENSIONS
天台的月光 周杰伦
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
快乐家族爸爸去哪儿
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
mvPACKAGE DIMENSIONS
NOTES:
曾毅李娜
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198
2.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED.
4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
PLANE
DIM
MIN MAX MIN MAX MILLIMETERS
INCHES A 0.1750.205  4.45  5.21B 0.1700.210  4.32  5.33C 0.1250.165  3.18  4.19D 0.0160.0210.4070.533G 0.050 BSC    1.27 BSC H 0.100 BSC    2.54 BSC J 0.0140.0160.360.41K 0.500−−−12.70−−−L 0.250−−−  6.35−−−N 0.0800.105  2.03  2.66P −−−0.050−−−  1.27R 0.115−−−  2.93−−−V
0.135−−−
3.43−−−
STYLE 1:
PIN 1.ANODE
2.CATHODE
TO−92 (TO−226AC)CASE 182−06ISSUE L被遗忘的爱
ON Semiconductor  and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failur
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