P-Channel 8-V (D-S) MOSFET
FEATURES
•Halogen-free
•TrenchFET ® Power MOSFET
•New Thermally Enhanced PowerPAK ®
SC-70 Package
- Small Footprint Area - Low On-Resistance
APPLICATIONS
•Load Switch, PA Switch for Portable Devices
PRODUCT SUMMARY
V DS  (V)
R DS(on) (Ω)I D  (A)Q g  (Typ.)
- 8
0.023 at V GS = - 4.5 V - 12a 19 nC 0.031 at V GS = - 2.5 V
- 12a 0.040 at V GS = - 1.8 V - 12a 0.058 at V GS = - 1.5 V - 12a 0.095 at V GS
= - 1.2 V
- 12a
Notes:
a.Package limited
b.Surface Mounted on 1" x 1" FR4 board.
c.t = 5 s.
d.See Solder Profile (www.vishay/ppg?73257). The PowerPAK SC-70 is a leadless packag
e. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f.Maximum under Steady State conditions is 80 °C/W.ABSOLUTE MAXIMUM RATINGS  T A  = 25 °C, unless otherwise noted
Parameter Symbol Limit U nit
Drain-Source Voltage
V DS - 8V
Gate-Source Voltage
V GS ± 5Continuous Drain Current (T J  = 150 °C)
T C  = 25 °C I D - 12a A T C  = 70 °C - 12a
T A  = 25 °C - 12a, b, c T A  = 70 °C - 8.3b, c
Pulsed Drain Current I DM - 30
Continuous Source-Drain Diode Current
T C  = 25 °C I S - 12a
T A  = 25 °C - 2.9b, c Maximum Power Dissipation
T C  = 25 °C P D 19W T C  = 70 °C 12
T A  = 25 °C    3.5b, c T A  = 70 °C    2.2b, c
Operating Junction and Storage T emperature Range T J , T stg - 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum U nit
Maximum Junction-to-Ambient b, f
t ≤ 5 s R thJA 2836°C/W
Maximum Junction-to-Case (Drain)Steady State
R thJC    5.3  6.5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS  T J  = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min.Typ.Max.U nit
Static
Drain-Source Breakdown Voltage V DS V GS  = 0 V, I D  = - 250 µA
- 8
V V DS  Temperature Coefficient ΔV DS /T J I D  = - 250 µA - 7.3mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J    2.5
Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D  = - 250 µA - 0.35- 1V
Gate-Source Leakage
I GSS V DS  = 0 V , V GS  = ± 5 V  ± 100 nA
Zero Gate Voltage Drain Current I DSS V DS = - 8 V , V GS = 0 V - 1µA V DS = - 8 V, V GS = 0 V, T J = 55 °C
- 10
On-State Drain Current a
I D(on)
V DS ≤ - 5 V , V GS = - 4.5 V - 10
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 4.5 V, I D = - 7 A 0.0190.023Ω
V GS = - 2.5 V, I D = - 6 A
0.0260.031V GS = - 1.8 V , I D = - 5.3 A 0.0330.040V GS = - 1.5 V , I D = - 1.7 A 0.0430.058V GS = - 1.2 V , I D = - 1.1 A
0.0630.095
Forward T ransconductance a g fs
V DS  = - 4 V , I D = - 7 A
23
S Dynamic b
Input Capacitance C iss V DS  = - 4 V , V GS = 0 V , f = 1 MHz
1600pF
Output Capacitance
C oss 500Reverse Transfer Capacitance C rss  320Total Gate Charge Q g V DS  = - 4 V, V GS = - 5 V , I
D = - 10 A 2132nC V DS  = - 4 V , V GS = - 4.5 V, I D = - 10 A 1929
Gate-Source Charge Q gs    2.2Gate-Drain Charge Q gd  5Gate Resistance R g    f = 1 MHz
8Ω
Turn-On Delay Time t d(on) V DD  = - 4 V , R L  = 0.5 Ω
I D  ≅ - 8.3 A, V GEN  = - 4.5 V , R g  = 1 Ω
1525ns Rise Time
t r 2538Turn-Off Delay Time t d(off) 80120Fall Time
t f 4570Turn-On Delay Time t d(on) V DD  = - 4 V , R L  = 0.5 Ω
I D  ≅ - 8.3 A, V GEN  = - 5 V , R g  = 1 Ω1015Rise Time
t r 1220Turn-Off Delay Time t d(off) 80120Fall Time
t f
45
70
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C  = 25 °C
- 12A Pulse Diode Forward Current I SM - 30Body Diode Voltage
V SD I S  = - 8.3 A, V GS = 0 V
- 0.8- 1.2V Body Diode Reverse Recovery Time t rr I F  = - 8.3 A, di/dt = 100 A/µs, T J  = 25 °C
6090ns Body Diode Reverse Recovery Charge Q rr 3350
nC Reverse Recovery Fall Time t a 15ns
Reverse Recovery Rise Time
t b
45
www.djTYPICAL CHARACTERISTICS  25
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
On-Resistance vs. Junction Temperature
TYPICAL CHARACTERISTICS  25°C, unless otherwise noted
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
TYPICAL CHARACTERISTICS  25
Power Derating
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.