黄磊个人资料TC1301A/B
Features
•Dual Output LDO with Microcontroller Reset Monitor Functionality:
-V OUT1 = 1.5V to 3.3V @ 300mA
-V OUT2 = 1.5V to 3.3V @ 150mA
-V RESET = 2.20V to 3.20V
•Output Voltage and RESET Threshold Voltage Options Available (See Table8-1)
•Low Dropout Voltage:
-V OUT1 = 104mV @ 300mA, Typical
-V OUT2 = 150mV @ 150mA, Typical
•Low Supply Current: 116µA, Typical
TC1301A/B with both output voltages available •Reference Bypass Input for Low-Noise Operation •Both Output Voltages Stable with a Minimum of 1µF Ceramic Output Capacitor
•Separate Input for RESET Detect Voltage
(TC1301A)
•Separate V OUT1 and V OUT2 SHDN pins
(TC1301B)
•RESET Output Duration: 300ms. Typical •Power-Saving Shutdown Mode of Operation •Wake-up from SHDN: 5.3µs. Typical
•Small 8-pin DFN and MSOP Package Options •Operating Junction Temperature Range:
--40°C to +125°C
•Overtemperature and Overcurrent Protection Applications
•Cellular/GSM/PHS Phones
•Battery-Operated Systems
•Hand-Held Medical Instruments
•Portable Computers/PDAs
big big world伴奏•Linear Post-Regulators for SMPS
•Pagers
Related Literature
•AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2002
•AN766, “Pin-Compatible CMOS Upgrades to BiPolar LDOs”, DS00766, Microchip Technology Inc., 2002
•AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792, Microchip Technology Inc., 2001Description
The TC1301A/B combines two Low Dropout (LDO) regulators and a microcontroller RESET function
into a single 8-pin MSOP or DFN package. Both regulator outputs feature low dropout voltage, 104mV @300mA for V OUT1, 150mV @ 150mA for V OUT2, low quiescent current consumption, 58µA each and a typical regulation accuracy of 0.5%. Several fixed-output voltage and detector voltage combinations are available. A reference bypass pin is available to further reduce output noise and improve the power supply rejection ratio of both LDOs.
The TC1301A/B is stable over all line and load conditions with a minimum of 1µF of ceramic output capacitance, and utilizes a unique compensation scheme to provide fast dynamic response to sudden line voltage and load current changes.
For the TC1301A, the microcontroller RESET function operates independently of both V OUT1 and V OUT2. The
DET pin.The SHDN2 pin is used to control the output of V OUT2 only. V OUT1 will power-up and down with V IN. In the case of the TC1301B, the detect voltage input of
OUT1. Both V OUT1 and V OUT2 have independent shutdown capability.
Additional features include an overcurrent limit and overtemperature protection that, when combined, provide a robust design for all load fault conditions.
Package Types
8-Pin DFN/MSOP
RESET
SHDN2
Bypass
GND
V DET
1
2
3
45
6
7
8
V OUT2
V IN
1
2
3
45
6
7
8 V OUT1
TC1301A
RESET
SHDN2
Bypass
GND
V DET
V OUT2
V IN
V OUT1
DFN8MSOP8
RESET
SHDN2
Bypass
GND
你和我的倾城时光歌曲SHDN1
1
2
3
45
6
7
8
V OUT2
V IN
1
2
林榆涵3
45
6
7
8 V OUT1
TC1301B
RESET
SHDN2
Bypass
GND
SHDN1
V OUT2
V IN
V OUT1
DFN8MSOP8
Dual LDO with Microcontroller RESET Function
© 2005 Microchip Technology Inc.DS21798B-page 1
TC1301A/B
DS21798B-page 2© 2005 Microchip Technology Inc.
Functional Block Diagrams
Typical Application Circuits
LDO #2 150mA
LDO #1 300mA
LDO #2 150mA
V IN
V OUT1
V OUT2
Bandgap Reference 1.2V
SHDN2
Threshold Detector Time Delay 300ms, typ
RESET
V DET
GND
Bypass TC1301A
V DET
TC1301B
V IN SHDN2
GND
Bypass
SHDN1
LDO #1 300mA
Threshold Detector
Time Delay 300ms typ
V OUT1
V OUT2
RESET V O U T 1
Bandgap Reference 1.2V V
OUT1841
23RESET
GND
V DET BATTERY C OUT1
1µF Ceramic X5R
C IN 1µF
TC1301A
C OUT2
1µF Ceramic X5R
C BYPASS (Note)
10nF Ceramic
Bypass V IN 7
V OUT26SHDN2
ON/OFF Control V OUT2
System RESET
2.8V @ 300mA
2.6V @ 150mA
5
V
OUT18
41
23RESET GND
SHDN1
BATTERY C OUT1
1µF Ceramic X5R
C IN 1µF
TC1301B
1µF Ceramic X5R
Bypass V IN 7
2.7V to 4.2V
V OUT26SHDN2
ON/OFF Control V OUT2
System RESET
2.8V @ 300mA
2.6V @ 150mA
5
ON/OFF Control V OUT1
Note: C BYPASS  is optional
2.7V to 4.2V
C OUT2
TC1301A/B
1.0ELECTRICAL
CHARACTERISTICS
友情岁月mvAbsolute Maximum Ratings †
6.5V Maximum Voltage on Any Pin ......(V SS – 0.3) to (V IN + 0.3)V Internally Limited (Note7) .-65°C to +150°C Maximum Junction Temperature, +150°C Continuous Operating Temperature Range..-40°C to +125°C ESD protecti
on on all pins, HBM, MM..................... 4kV, 400V † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V IN = V R +1V, I OUT1 =I OUT2 = 100µA, C IN = 4.7µF, C OUT1 = C OUT2 = 1µF, C BYPASS = 10nF, SHDN > V IH, T A = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage V IN  2.7—  6.0V Note1
Maximum Output Current I OUT1Max300——mA V IN = 2.7V to 6.0V (Note1) Maximum Output Current I OUT2Max150——mA V IN = 2.7V to 6.0V (Note1)
Output Voltage Tolerance
(V OUT1 and V OUT2)
V OUT V R – 2.5V R±0.5V R + 2.5%Note2
Temperature Coefficient
(V OUT1 and V OUT2)
TCV OUT—25—ppm/°C Note3
Line Regulation (V OUT1 and V OUT2)ΔV OUT/
ΔV IN
—0.020.2%/V(V R+1V) ≤ V IN≤ 6V
Load Regulation, V OUT≥ 2.5V (V OUT1 and V OUT2) ΔV OUT/
V OUT
-10.1+1%I OUTX = 0.1mA to I OUTMax (Note4)
Load Regulation, V OUT < 2.5V (V OUT1 and V OUT2)ΔV OUT/
V OUT
-1.50.1+1.5%I OUTX = 0.1mA to I OUTMax (Note4)
Thermal RegulationΔV OUT/ΔP D—0.04—%/W Note5
Dropout Voltage (Note6)
V OUT1≥ 2.7V V IN – V OUT—104180mV I OUT1 = 300mA
V OUT2≥ 2.6V V IN – V OUT—150250mV I OUT2 = 150mA
Supply Current
TC1301A I IN(A)—103180µA SHDN2 = V IN, V DET = OPEN,
I OUT1 = I OUT2 = 0mA
TC1301B I IN(B)—114180µA SHDN1 = SHDN2  = V IN,
I OUT1 = I OUT2 = 0mA
Note1:The minimum V IN has to meet two conditions: V IN≥ 2.7V and V IN≥ V R + V DROPOUT.
2:V R is defined as the higher of the two regulator nominal output voltages (V OUT1 or V OUT2).
3:TCV OUT = ((V OUTmax - V OUTmin) * 106)/(V OUT * ΔT).
4:Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5:Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I LMAX at V IN = 6V for
t = 10ms.
6:Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value measured at a 1V differential.
7:The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., T A, T J, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown.
© 2005 Microchip Technology Inc.DS21798B-page 3
TC1301A/B
DS21798B-page 4© 2005 Microchip Technology Inc.
Shutdown Supply Current TC1301A
I IN_SHDNA —5890µA SHDN2 = GND, V DET  = OPEN Shutdown Supply Current TC1301B
I IN_SHDNB —0.11µA SHDN1 = SHDN2 = GND
Power Supply Rejection Ratio PSRR —58—dB    f ≤ 100Hz, I OUT1 = I OUT2 = 50mA,C IN  = 0µF
Output Noise
eN
830
nV/(Hz)½
f ≤1kHz, I OUT1 = I OUT2 = 50mA,C IN  = 0µF Output Short-Circuit Current (Average)V OUT1I OUTsc —200—mA R LOAD1 ≤ 1ΩV OUT2
I OUTsc —140—mA R LOAD2 ≤ 1ΩSHDN Input High Threshold V IH 45——%V IN V IN  = 2.7V to 6.0V SHDN Input Low Threshold V IL ——15%V IN V IN  = 2.7V to 6.0V
Wake-Up Time (From SHDN mode), (V OUT2)
t WK —  5.320µs V IN  = 5V, I OUT1 = I OUT2 = 30mA,See Figure 5-1
Settling Time (From SHDN mode), (V OUT2)
t S —50—µs V IN  = 5V, I OUT1 = I OUT2 = 50mA,See Figure 5-2
Thermal Shutdown Die Temperature
T SD —150—°C V IN  = 5V, I OUT1 = I OUT2 = 100µA Thermal Shutdown Hysteresis T HYS —10—°C V IN  = 5V
Voltage Range
V DET
1.01.2—
6.06.0V
T A  = 0°C to +70°C T A  = -40°C to +125°C
RESET Threshold
V TH
-1.4—+1.4%-2.8
—+2.8%T A  = -40°C to +125°C
RESET Threshold Tempco ΔV TH /ΔT —30—ppm/°C V DET  RESET Delay
t RPD —180—µs V DET  = V TH  to (V TH  – 100mV),See Figure 5-3
RESET Active Time-out Period
t RPU 140
300
560
ms
V DET  = V TH  - 100mV to V TH  + 100mV, I SINK  = 1.2mA, See  Figure 5-3.RESET Output Voltage Low V OL ——0.2V
V DET  = V THmin , I SINK  = 1.2mA,I SINK  = 100µA for V DET  < 1.8V,See Figure 5-3
RESET Output Voltage High V OH
0.9 V DET
——V
V DET  > V THmax , I SOURCE  = 500µA,See Figure 5-3DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V IN  = V R  +1V, I OUT1 = I OUT2 = 100µA, C IN  = 4.7µF, C OUT1 = C OUT2 = 1µF, C BYPASS  = 10nF, SHDN > V IH , T A  = +25°C.
Boldface  type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Sym Min Typ Max Units Conditions
Note 1:
The minimum V IN  has to meet two conditions: V IN  ≥ 2.7V and V IN  ≥ V R  + V DROPOUT .
2:V R  is defined as the higher of the two regulator nominal output voltages (V OUT1 or V OUT2).3:TCV OUT  = ((V OUTmax  - V OUTmin ) * 106)/(V OUT  * ΔT).
4:
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
5:
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I LMAX  at V IN  = 6V for t = 10ms.
6:
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its value measured at a 1V differential.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., T A , T J , θJA ). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown .
TC1301A/B
TEMPERATURE SPECIFICATIONS
Electrical Specifications:Unless otherwise indicated, all limits are specified for: V IN = +2.7V to +6.0V.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Operating Junction Temperature
T A-40—+125°C Steady State
Range
Storage Temperature Range T A-65—+150°C
Maximum Junction Temperature T J——+150°C Transient
Thermal Package Resistances
Thermal Resistance, MSOP8θJA—208—°C/W Typical 4-Layer Board
Thermal Resistance, DFN8θJA—41—°C/W Typical 4-Layer Board with Vias
© 2005 Microchip Technology Inc.DS21798B-page 5
TC1301A/B
DS21798B-page 6© 2005 Microchip Technology Inc.
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, V IN  = V R  +1V, I OUT1 = I OUT2 = 100µA, C IN  = 4.7µF, C OUT1 = C OUT2 = 1µF (X5R or X7R),
C BYPASS  = 0pF, SHDN1 = SHDN2 > V IH . For the TC1301A, V DET  = V OUT1, RESET = OPEN, T A  = +25°C.
FIGURE 2-1:Quiescent Current vs. Input
Voltage.
vs. Input Voltage.
FIGURE 2-3:Quiescent Current vs. Junction Temperature.
FIGURE 2-4:Output Voltage vs. Input
Voltage.
FIGURE 2-5:Output Voltage vs. Input
Voltage.
FIGURE 2-6:Dropout Voltage vs. Output
Current (V OUT1).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.